| PART |
Description |
Maker |
| HYB18T256324F-22 HYB18T256324F-16 HYB18T256324F-20 |
256-Mbit GDDR3 DRAM [600MHz]
|
INFINEON[Infineon Technologies AG]
|
| IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| IS42S16160B-6T IS42S83200B-6T IS42S16160B-6TL IS42 |
256-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
|
| IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| HYB39S256160AT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SST31LF043A-70-4E-WI SST31LF041 SST31LF041-300-4C- |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory
|
SST[Silicon Storage Technology, Inc]
|
